unisonic technologies co., ltd UP1753 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2012 unisonic technologies co., ltd qw-r220-020.c high current low v ce(sat) transistor ? description the utc UP1753 is specially designed to have high current and low v ce(sat) to suit for power amplifier application and power switching application. ? features *v ce(sat) typ is below 300mv at 5a * max continuous current 6 a * bv ceo is 100v minimum ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UP1753l-aa3-r UP1753g-aa3-r sot-223 b c e tape reel
UP1753 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r220-020.c ? absolute maximum ratings parameter symbol ratings unit collector-base voltage v cbo 200 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 6 v peak pulse current i cm 10 a continuous collector current i c 6 a power dissipation (t a =25 ) p d 3 w junction temperature t j +150 storage temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a = 25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100a 200 300 v collector-emitter breakdown voltage bv ceo i c =10ma (note1) 100 120 v emitter-base breakdown voltage bv ebo i e =100a 6 8 v collector cut-off current i cbo v cb =150v 10 na collector cut-off current i cer v ce =150v, r 1k ? 10 na emitter cut-off current i ebo v eb =6v 10 na collector-emitter satu ration voltage v ce(sat) i c =0.1a, i b =5ma (note1) 50 mv i c =2a, i b =100ma (note1) 150 i c =5a, i b =500ma (note1) 330 base-emitter satura tion voltage v be ( sat ) i c =5a, i b =500ma (note1) 1250 mv base-emitter turn -on voltage v be ( on ) i c =5a, v ce =2v (note1) 1100 mv static forward current transfer ratio h fe i c =10ma, v ce =2v 100 200 i c =2a, v ce =2v (note1) 100 200 300 i c =4a, v ce =2v (note1) 50 100 i c =10a, v ce =2v (note1) 20 transition frequency f t i c =100ma, v ce =10v f=50mhz 100 mhz output capacitance c ob v cb =10v, f=1mhz 38 pf switching times t on i c =1a, v cc =10v i b1 =i b2 =100ma 50 ns t off 1600 ns note: 1.measured under pulsed conditions. pulse width=300s. duty cycle 2%,
UP1753 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r220-020.c ? typical characteristics i c /i b =10 0 0.2 0.4 0.6 0.8 0.01 0.1 1 10 100 collector-emitter saturation voltage vs. collector current collector current, i c (a) 0 0.4 1.4 0.01 0.1 1 100 dc current gain vs. collector current collector current, i c (a) 0.8 1.2 i c /i b =50 v ce =1v v ce =5v 10 0.2 0.6 1.0 1.6
UP1753 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r220-020.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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